Ivanovo, Ivanovo, Russian Federation
The article considers the basic processes occurring in a laboratory reactor during plasmachemical treatment of gallium arsenide (GaAs) in chlorine plasma. The treatment of GaAs has a significant influence both on etching processes of semiconductor material and on the formation of the stationary concentration of chlorine in the reactor. The chlorine atoms act as the main chemically active particle (CAP) in etching GaAs. Along with the processes of chlorine atom formation we deal with the physical processes of their heterogeneous recombination on the inner surface of the glass reactor and on GaAs samples. The work demonstrates experimentally the exaggeration of the rate constants of interaction of chlorine atoms with GaAs without taking into account the stages of heterogeneous recombination of chlorine atoms on the surfaces bounding the plasma zone. We carry out gallium arsenide etching in a flow reactor at low plasma gas flow rates and the constant total pressure. In order to study the diagnostic purposes and experimental determination of rate constants of target processes of chemical and heterogeneous CAP recombination directly in the zone of the positive column of the glow discharge in chlorine we use a relaxation pulse technique.
process, stages, etching, concentration, particles, recombination, plasma
1. Zhang B., Wang D., Tang J., Wang X., Wei Z., Nie Z., Wang B., Zhang J., Xing G., Zhang W. Ultrafast carrier relaxation dynamics of photoexcited GaAs and GaAs/AlGaAs nanowire array. PCCP: Physical Chemistry Chemical Physics. 2020. V. 22. N 44. P. 25819-25826. DOI:https://doi.org/10.1039/d0cp04250a.
2. Galiev G.B., Klimov E.A., Pushkarev S.S., Klochkov A.N., Zaitsev A.A. Study of the surface morphology, electrophysical characteristics, and photoluminescence spectra of GaAs epitaxial films on GaAs (110) substrates. Optics and Spectroscopy. 2020. V. 128. N 7. P. 877-884. DOI:https://doi.org/10.21883/OS.2020.07.49556.18-20.
3. Pivovarenok S.A., Dunaev A.V., Efremov A.M., Svetcov V.I. Plazmennoe nanorazmernoe travlenie GaAs v hlore i hlorovodorode. Nanotehnika. 2011. № 1 (25). S. 69-71.
4. Sitanov D.V., Efremov A.M., Svettsov V.I. Dissociation of chlorine molecules in a glow discharge plasma in mixtures with argon, oxygen, and nitrogen. High Energy Chemistry. 1998. V. 32. N 2. P. 123-126.
5. Pivovarenok S.A., Murin D.B., Sitanov D.V. Effect of a mixture’s composition on the electrophysical parameters and emission spectra of hydrogen chloride plasma with chlorine and helium. Russian Microelectronics. 2021. V. 50. N 1. S. 39-44. DOI:https://doi.org/10.31857/S0544126920060095.
6. Sitanov D.V., Pivovarenok S.A. Kinetics of atomic recombination on silicon samples in chlorine plasma. Plasma Physics Reports. 2018. V. 44. N 8. P. 713-722. DOI:https://doi.org/10.1134/S0367292118080085.
7. Curley G.A., Gatilova L., Guilet S., Bouchoule S., Gogna G.S., Sirse N., Karkari S., Booth J.P. Surface loss rates of H and Cl radicals in an inductively coupled plasma etcher derived from time-resolved electron density and optical emission measurements. J. Vac. Sci. Technol. 2010. V. 28. N 2. P. 360-372. DOI:https://doi.org/10.1116/1.3330766.
8. Luc Stafford, Joydeep Guha, Rohit Khare, Stefano Mattei, Olivier Boudreault, Boris Clain, Vincent M. Donnelly. Experimental and modeling study of O and Cl atoms surface recombination reactions in O2 and Cl2 plasmas. Pure Appl. Chem. 2010. V. 82. N. 6. P. 1301–1315. DOIhttps://doi.org/10.1351/PAC-CON-09-11-02.
9. Rhallabi A., Chanson R., Landesman J.-P., Cardinaud C., Fernandez M.-C. Atomic scale study of INP etching by Cl2 –Ar ICP plasma discharge. The European Physical Journal. Applied Physics. 2011. V. 53. N 3. P. 33606.
10. Efremov A.M., Betelin V.B., Kwon K.Ho., Snegirev D.G. Plasma parameters and kinetics of active species in HBr + Cl2 + O2 gas mixture. ChemChemTech. 2019. V. 62. N 7. P. 72-79. DOI:https://doi.org/10.6060/ivkkt.20196207.5947.
11. Skorodumov A.E., Sitanov D.V., Svettsov V.I. Use of optical emission spectroscopy for determining the number concentration of chlorine atoms in a chlorine-oxygen plasma. High Energy Chemistry. 2000. V. 34. N 5. P. 331-333. DOI:https://doi.org/10.1007/BF02762688.
